Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they no representative responsivity in the deep-ultraviolet (UV) wavelength region. As a new-generation semiconductor, gallium oxide (Ga2O3), which has an ultrawide bandgap, is appropriate solar-blind (200 nm–280 nm) deep-UV detection. In this work, ultrawide-bandgap Ga2O3 was introduced into inorganic perovskite device structure of sapphire/β-Ga2O3/Indium Zinc Oxide (IZO)/CsPbBr3. The performance PD obviously enhanced deep UV A vacuum-free Mist-CVD used to realize epitaxial growth β-Ga2O3 film on sapphire. By introducing layer, light current heterojunction from 10−8 10−7, leds its detectivity (D*) reach 1.04 × 1012 Jones under 254 nm illumination intensity 500 μW/cm2 at 5 V bias.